bombardment angle dependence of reactive ion-beam etching of GaAs with CH4/H2

  1. Villalvilla, J.
  2. Santos, C.
  3. Vallés-Abarca, J.
Revue:
Vacuum

ISSN: 0042-207X

Année de publication: 1994

Volumen: 45

Número: 10-11

Pages: 1113-1114

Type: Article

DOI: 10.1016/0042-207X(94)90038-8 GOOGLE SCHOLAR
La source de données: Scopus