University of Salford-ko ikertzaileekin lankidetzan egindako argitalpenak (7)

1993

  1. The effects of model parameter variations on high-fluence ion implantation

    Vacuum, Vol. 44, Núm. 8, pp. 783-789

1992

  1. The effect of parameter choice on predicted depth resolution in sputter profiling

    Nuclear Inst. and Methods in Physics Research, B, Vol. 67, Núm. 1-4, pp. 486-490

1985

  1. Electrostatic edge modes of a hyperbolic dielectric wedge: Analytical solution

    Physical Review B, Vol. 32, Núm. 9, pp. 6045-6047

1984

  1. Description of Damage Accumulation and Overlap in Ion Irradiated Solids

    physica status solidi (a), Vol. 81, Núm. 1, pp. 267-272

1982

  1. Atomic mixing effects on high fluence Ge implantation into Si at 40 keV

    Nuclear Instruments and Methods, Vol. 194, Núm. 1-3, pp. 449-451

  2. Theoretical and experimental study of high fluence germanium implantation into silicon. Contribution of atomic mixing

    Vacuum, Vol. 32, Núm. 7, pp. 433-437

1981

  1. Ion range and damage depth parameters for 20-200 keV Pb+ ion implantation in Si

    Nuclear Instruments and Methods, Vol. 191, Núm. 1-3, pp. 124-134