Mechanism of boron diffusion in silicon: An Ab initio and kinetic monte carlo study

  1. Sadigh, B.
  2. Lenosky, T.J.
  3. Theiss, S.K.
  4. Caturla, M.-J.
  5. Diaz de La Rubia, T.
  6. Foad, M.A.
Revue:
Physical Review Letters

ISSN: 1079-7114 0031-9007

Année de publication: 1999

Volumen: 83

Número: 21

Pages: 4341-4344

Type: Article

DOI: 10.1103/PHYSREVLETT.83.4341 GOOGLE SCHOLAR

Objectifs de Développement Durable