Mechanism of boron diffusion in silicon: An Ab initio and kinetic monte carlo study

  1. Sadigh, B.
  2. Lenosky, T.J.
  3. Theiss, S.K.
  4. Caturla, M.-J.
  5. Diaz de La Rubia, T.
  6. Foad, M.A.
Journal:
Physical Review Letters

ISSN: 1079-7114,  0031-9007

Year of publication: 1999

Volume: 83

Issue: 21

Pages: 4341-4344

Type: Article

DOI: 10.1103/PHYSREVLETT.83.4341 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus