Effect of ramp rate and annealing temperature on boron transient diffusion in implanted silicon: Kinetic Monte Carlo simulations
- Caturla, M.J.
- Foad, M.
- Diaz de la Rubia, T.
Proceedings:
Proceedings of the International Conference on Ion Implantation Technology
ISBN: 078034538X
Year of publication: 1999
Volume: 2
Pages: 1018-1021
Type: Conference paper