I.U. DE MATERIALES
Instituto
AT and T Bell Laboratories
Newark, EE. UU.Publicaciones en colaboración con investigadores/as de AT and T Bell Laboratories (4)
1996
-
Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study
Journal of Applied Physics, Vol. 80, Núm. 11, pp. 6160-6169
-
Ion-beam processing of silicon at keV energies: A molecular-dynamics study
Physical Review B - Condensed Matter and Materials Physics, Vol. 54, Núm. 23, pp. 16683-16695
1995
-
Disordering and defect production in silicon by keV ion irradiation studied by molecular dynamics
Nuclear Inst. and Methods in Physics Research, B, Vol. 106, Núm. 1-4, pp. 1-8
-
Recrystallization of a planar amorphous-crystalline interface in silicon by low energy recoils: A molecular dynamics study
Journal of Applied Physics, Vol. 77, Núm. 7, pp. 3121-3125