Grupo de Nanofísica
University of Florida
Gainesville, Estados UnidosPublicaciones en colaboración con investigadores/as de University of Florida (4)
2000
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Relative stability of silicon self-interstitial defects
Materials Research Society Symposium - Proceedings, Vol. 610, pp. B11.10.1-B11.10.6
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Relative stability of silicon self-interstitial defects
Materials Research Society Symposium - Proceedings
1998
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Predictive simulation of transient activation processes in boron-doped silicon structures
Technical Digest - International Electron Devices Meeting
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Predictive simulation of transient activation processes in boron-doped silicon structures
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST