Low-Frequency Noise Behavior of La-Doped HfSiON/Metal Gate nMOSFETs

  1. Choi, Do-Young
  2. Park, Min Sang
  3. Sohn, Chang Woo
  4. Sagong, Hyun Chul
  5. Jung, Eui-Young
  6. Lee, Jeong-Soo
  7. Jeong, Yoon-Ha
  8. Kang, Chang Yong
Buch:
2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)

ISBN: 978-1-4244-9111-7

Datum der Publikation: 2011

Kongress: 49th Annual IEEE International Reliability Physics Symposium (IRPS)

Art: Konferenz-Beitrag

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Fuente de los datos: WoS