First-principles-based predictive simulations of B diffusion and activation in ion implanted Si

  1. Theiss, Silva K.
  2. Caturla, Maria-Jose
  3. Lenosky, Thomas J.
  4. Sadigh, Babak
  5. Diaz de la Rubia, Tomas
  6. Giles, Martin D.
  7. Foad, Majeed A.
Actes de conférence:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Année de publication: 2000

Pages: 18-22

Type: Article

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La source de données: Scopus