Defect and dopant diffusion in ion implanted silicon: An atomic scale simulation approach

  1. Caturla, MJ
  2. Theiss, SK
  3. Lenosky, TJ
  4. de la Rubia, TD
Liburua:
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST

ISBN: 0-7803-4774-9

Argitalpen urtea: 1998

Orrialdeak: 489-492

Biltzarra: International Electron Devices Meeting (IEDM)

Mota: Biltzar ekarpena

DOI: 10.1109/IEDM.1998.746404 GOOGLE SCHOLAR
Datuen iturria: WoS