Ion range and damage depth parameters for 20-200 keV Pb+ ion implantation in Si

  1. Christodoulides, C.E.
  2. Kadhim, N.J.
  3. Carter, G.
  4. Jimenez-Rodriguez, J.J.
  5. Gras-Marti, A.
Revue:
Nuclear Instruments and Methods

ISSN: 0029-554X

Année de publication: 1981

Volumen: 191

Número: 1-3

Pages: 124-134

Type: Article

DOI: 10.1016/0029-554X(81)90994-0 GOOGLE SCHOLAR
La source de données: Scopus