Predictive simulation of transient activation processes in boron-doped silicon structures

  1. Lilak, AD
  2. Law, ME
  3. Jones, KS
  4. Giles, MD
  5. Andideh, E
  6. Caturla, MJ
  7. de la Rubia, TD
  8. Zhu, J
  9. Theiss, S
Buch:
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST

ISBN: 0-7803-4774-9

Datum der Publikation: 1998

Seiten: 493-496

Kongress: International Electron Devices Meeting (IEDM)

Art: Konferenz-Beitrag

DOI: 10.1109/IEDM.1998.746405 GOOGLE SCHOLAR
Fuente de los datos: WoS