First-principles-based predictive simulations of B diffusion and activation in ion implanted Si

  1. Theiss, SK
  2. Caturla, MJ
  3. Lenosky, TJ
  4. Sadigh, B
  5. de la Rubia, TD
  6. Giles, MD
  7. Foad, MA
Livre:
2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES

ISBN: 0-7803-6279-9

Année de publication: 2000

Pages: 18-22

Congreso: International Conference on Simulation of Semiconductor Processes and Devices

Type: Communication dans un congrès

DOI: 10.1109/SISPAD.2000.871196 GOOGLE SCHOLAR
La source de données: WoS