Predictive simulation of transient activation processes in boron-doped silicon structures
- Lilak, Aaron D.
- Law, Mark E.
- Jones, Kevin S.
- Giles, Martin D.
- Andideh, Ebrahim
- Caturla, Maria-Jose
- Diaz de la Rubia, Tomas
- Zhu, Jing
- Theiss, Silva
Actes de conférence:
Technical Digest - International Electron Devices Meeting
ISSN: 0163-1918
Année de publication: 1998
Pages: 493-496
Type: Communication dans un congrès